Optical properties and band structure of short-period GaAs/AlAs superlattices
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1987/12/01
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Journal
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Indian UGC (journal)
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Refrences36
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Citations110
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E. Finkman
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M.D. Sturge
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M.-H. Meynadier
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R.E. Nahory
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M.C. Tamargo
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D.M. Hwang
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C.C. Chang
Journal Categories
Science
Physics
Science
Physics
Optics
Light
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets | Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 163 | 1986 | |
X-point excitons in AlAs/GaAs superlattices | Applied Physics Letters |
| 173 | 1986 |
| 10.1103/PhysRevB.35.6207 | Physical Review | 1987 | ||
| 10.1103/PhysRevB.35.2517 | Physical Review | 1987 | ||
| 10.1103/PhysRevB.36.2875 | Physical Review | 1987 |
Refrences Analysis
The category
Science: Physics 23
is the most frequently represented among the references in this article. It primarily includes studies from Physical Review and Applied Physics Letters. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Dynamical Formation Process of Electron–Hole Droplets in a GaAs/AlAs Type-II Superlattice | Journal of the Physical Society of Japan |
| 2016 | |
Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires | Applied Physics Letters |
| 36 | 2008 |
| Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices: The effect of the boundary conditions | Semiconductors |
| 2 | 2004 |
| Phonon modes of short-period (GaAs)n/(AlAs)n superlattices | Physics Letters A |
| 2002 | |
| Time-resolved spectra and kinetics of the exciton photoluminescence in different types of GaAs/AlAs superlattices | Superlattices and Microstructures |
| 2001 |
Citations Analysis
The category
Science: Physics 70
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing and was published in 1988. The most recent citation comes from a 2016 study titled Dynamical Formation Process of Electron–Hole Droplets in a GaAs/AlAs Type-II Superlattice. This article reached its peak citation in 1989, with 22 citations. It has been cited in 27 different journals, 3% of which are open access. Among related journals, the Physical Review B cited this research the most, with 37 citations. The chart below illustrates the annual citation trends for this article.