Low-temperature mobility due to unscreened charged impurities in compensated semiconductors

Article Properties
Cite
Čápek, V. “Low-Temperature Mobility Due to Unscreened Charged Impurities in Compensated Semiconductors”. Czechoslovak Journal of Physics, vol. 30, no. 6, 1980, pp. 684-7, https://doi.org/10.1007/bf01595640.
Čápek, V. (1980). Low-temperature mobility due to unscreened charged impurities in compensated semiconductors. Czechoslovak Journal of Physics, 30(6), 684-687. https://doi.org/10.1007/bf01595640
Čápek V. Low-temperature mobility due to unscreened charged impurities in compensated semiconductors. Czechoslovak Journal of Physics. 1980;30(6):684-7.
Refrences
Title Journal Journal Categories Citations Publication Date
On the mobility of a very pure semiconductor including the low impurity concentration limit Solid State Communications
  • Technology: Chemical technology
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 10 1977
Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference Journal of Physics C: Solid State Physics 133 1977
On the mobility of very pure semiconductors at very low temperatures Journal of Physics and Chemistry of Solids
  • Science: Chemistry: General. Including alchemy
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 15 1976
10.1103/PhysRev.77.388 Physical Review 1950
Brooks H., Herring C., Phys. Rev.83 (1951), 879. Physical Review 1951
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