Controllable Multiple Depression in a Graphene Oxide Artificial Synapse

Article Properties
  • Language
    English
  • DOI (url)
    10.1002/aelm.201600244
  • Publication Date
    2016/11/09
  • Journal
    Advanced Electronic Materials
  • Indian UGC (journal)
  • Refrences
    58
  • Citations
    28
  • Laiyuan Wang Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Zhiyong Wang Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Wei Zhao Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Bo Hu Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Linghai Xie Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Mingdong Yi Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Haifeng Ling Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Chenxi Zhang Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Yan Chen Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Jinyi Lin Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 ChinaKey Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China
  • Jialu Zhu Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China
  • Wei Huang Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 ChinaKey Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China
Journal Categories
Science
Chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
Title Journal Journal Categories Citations Publication Date
Title Nature Precedings 2009
Title 2000
Title 1988
Title 1987
Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems Scientific Reports
  • Medicine
  • Science
  • Science: Science (General)
 219 2014
Citations
Title Journal Journal Categories Citations Publication Date
High‐Performance GdNiO3 Epitaxial Film Memristor for Neuralactivity Analysis

 Advanced Functional Materials
  • Science: Chemistry: General. Including alchemy
  • Science: Chemistry: Physical and theoretical chemistry
  • Technology: Chemical technology
  • Science: Chemistry
  • Science: Physics
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 2024
Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors ACS Applied Materials & Interfaces
  • Technology: Chemical technology
  • Science: Chemistry
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 6 2023
Exploring the fluorination effect mechanism on charge transport in organic solar cells Solar Energy
  • Technology: Environmental technology. Sanitary engineering
  • Social Sciences: Industries. Land use. Labor: Special industries and trades: Energy industries. Energy policy. Fuel trade
  • Technology: Engineering (General). Civil engineering (General)
 6 2022
Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

 RSC Advances
  • Science: Chemistry
  • Science: Chemistry: General. Including alchemy
  • Science: Chemistry
 2022
Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

 Nanomaterials
  • Science: Chemistry
  • Science: Chemistry: General. Including alchemy
  • Technology: Chemical technology
  • Science: Chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 3 2022
Citations Analysis
Category Category Repetition
Science: Chemistry20
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials20
Technology: Chemical technology19
Science: Physics14
Science: Chemistry: General. Including alchemy8
Science: Chemistry: Physical and theoretical chemistry7
Technology: Mining engineering. Metallurgy1
Technology: Environmental technology. Sanitary engineering1
Social Sciences: Industries. Land use. Labor: Special industries and trades: Energy industries. Energy policy. Fuel trade1
Technology: Engineering (General). Civil engineering (General)1
Medicine: Internal medicine: Neurosciences. Biological psychiatry. Neuropsychiatry1
Medicine: Medicine (General)1
Medicine: Therapeutics. Pharmacology1
Science: Biology (General)1
Science: Chemistry: Organic chemistry: Biochemistry1
Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics1
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks1
The category Science: Chemistry 20 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications and was published in 2017. The most recent citation comes from a 2024 study titled High‐Performance GdNiO3 Epitaxial Film Memristor for Neuralactivity Analysis. This article reached its peak citation in 2020, with 8 citations. It has been cited in 24 different journals, 20% of which are open access. Among related journals, the ACS Applied Materials & Interfaces cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year