Materials Quest for Advanced Interconnect Metallization in Integrated Circuits
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2023/06/15
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Journal
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Indian UGC (journal)
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Refrences307
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Citations6
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Jun Hwan Moon Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
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Eunjin Jeong Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
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Seunghyun Kim Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
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Taesoon Kim Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
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Eunsoo Oh Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
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Keun Lee Semiconductor R&D center Samsung Electronics Co., Ltd. Gyeonggi‐do 18448 Republic of Korea
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Hauk Han Semiconductor R&D center Samsung Electronics Co., Ltd. Gyeonggi‐do 18448 Republic of Korea
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Young Keun Kim Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea ORCID (unauthenticated)
Abstract
Cite
Moon, Jun Hwan, et al. “Materials Quest for Advanced Interconnect Metallization in Integrated Circuits”. Advanced Science, vol. 10, no. 23, 2023, https://doi.org/10.1002/advs.202207321.
Moon, J. H., Jeong, E., Kim, S., Kim, T., Oh, E., Lee, K., Han, H., & Kim, Y. K. (2023). Materials Quest for Advanced Interconnect Metallization in Integrated Circuits. Advanced Science, 10(23). https://doi.org/10.1002/advs.202207321
Moon, Jun Hwan, Eunjin Jeong, Seunghyun Kim, Taesoon Kim, Eunsoo Oh, Keun Lee, Hauk Han, and Young Keun Kim. “Materials Quest for Advanced Interconnect Metallization in Integrated Circuits”. Advanced Science 10, no. 23 (2023). https://doi.org/10.1002/advs.202207321.
Moon JH, Jeong E, Kim S, Kim T, Oh E, Lee K, et al. Materials Quest for Advanced Interconnect Metallization in Integrated Circuits. Advanced Science. 2023;10(23).
Journal Categories
Science
Science
Chemistry
Science
Chemistry
General
Including alchemy
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1109/IEDM13553.2020.9372053 | 2020 | |||
| 10.1063/1.2173547 | 2006 | |||
| 10.1063/1.2173528 | 2006 | |||
| 10.1063/1.2173528 | Current Science |
| 2003 | |
| 10.1063/1.2173528 | 1997 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Surface sulfurization of liner and ruthenium metallization to reduce interface scattering for Low-Resistance interconnect | Applied Surface Science |
| 2024 | |
| Effects of pyrazine and its derivatives as inhibitors on copper film chemical-mechanical polishing properties for ruthenium-based copper interconnect | Colloids and Surfaces A: Physicochemical and Engineering Aspects |
| 2024 | |
| Al3Sc thin films for advanced interconnect applications | Microelectronic Engineering |
| 1 | 2024 |
| Numerical evaluation of grain boundary electron scattering in molybdenum thin films: A critical analysis for advanced interconnects | Vacuum |
| 2024 | |
Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing | ECS Journal of Solid State Science and Technology |
| 2024 |
Citations Analysis
The category
Science: Physics 4
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Revolution of next-generation interconnect materials and key processes for advanced chips in post-moore era and was published in 2023. The most recent citation comes from a 2024 study titled Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing. This article reached its peak citation in 2024, with 5 citations. It has been cited in 6 different journals. Among related journals, the ECS Journal of Solid State Science and Technology cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.