Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor

Article Properties
  • Language
    English
  • DOI (url)
    10.1002/adom.202302887
  • Publication Date
    2024/02/17
  • Journal
    Advanced Optical Materials
  • Indian UGC (journal)
  • Refrences
    60
  • Yu‐Qing Hu Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Wen Xu Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Ning‐Tao Liu Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
  • Yun‐Kangqi Li Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Xing Deng Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Zhao Guan Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Yu‐Fan Zheng Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Shuai Yang Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Rong Huang Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Fang‐Yu Yue Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Yuan‐Yuan Zhang Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Hui Peng Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Bin‐Bin Chen Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
  • Ni Zhong Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 ChinaCollaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China
  • Ping‐Hua Xiang Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 ChinaCollaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China ORCID (unauthenticated)
  • Chun‐Gang Duan Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 ChinaCollaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China
Abstract
Cite
Hu, Yu‐Qing, et al. “Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor”. Advanced Optical Materials, 2024, https://doi.org/10.1002/adom.202302887.
Hu, Y., Xu, W., Liu, N., Li, Y., Deng, X., Guan, Z., Zheng, Y., Yang, S., Huang, R., Yue, F., Zhang, Y., Peng, H., Chen, B., Zhong, N., Xiang, P., & Duan, C. (2024). Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor. Advanced Optical Materials. https://doi.org/10.1002/adom.202302887
Hu, Yu‐Qing, Wen Xu, Ning‐Tao Liu, Yun‐Kangqi Li, Xing Deng, Zhao Guan, Yu‐Fan Zheng, et al. “Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor”. Advanced Optical Materials, 2024. https://doi.org/10.1002/adom.202302887.
Hu Y, Xu W, Liu N, Li Y, Deng X, Guan Z, et al. Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor. Advanced Optical Materials. 2024;.
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