IEEE Transactions on Electron Devices

Title Publication Date Language Citations
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration1994/01/01965
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs2001/03/01961
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm2000/01/01893
Comparison of 6H-SiC, 3C-SiC, and Si for power devices1993/03/01714
1/f noise sources1994/01/01679
A new recombination model for device simulation including tunneling1992/01/01568
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid1996/03/01566
CMOS image sensors: electronic camera-on-a-chip1997/01/01553
Short-channel effect in fully depleted SOI MOSFETs1989/01/01526
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors1990/03/01524
Scaling the Si MOSFET: from bulk to SOI to bulk1992/07/01515
Pentacene-based organic thin-film transistors1997/01/01458
Trapping effects and microwave power performance in AlGaN/GaN HEMTs2001/03/01453
Mechanical-thermal noise in micromachined acoustic and vibration sensors1993/05/01404
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport1991/03/01403
MOS capacitance measurements for high-leakage thin dielectrics1999/07/01384
Fast and long retention-time nano-crystal memory1996/01/01380
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown1998/04/01376
Noise as a diagnostic tool for quality and reliability of electronic devices1994/01/01369
Physical modeling of spiral inductors on silicon2000/03/01367
Optimum semiconductors for high-power electronics1989/09/01364
Multipactor1988/07/01342
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices1994/01/01336
Scaling theory for double-gate SOI MOSFET's1993/01/01334
The physics of amorphous-silicon thin-film transistors1989/01/01330
A new formula for secondary emission yield1989/09/01328
Very-high power density AlGaN/GaN HEMTs2001/03/01328
Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study1998/01/01328
MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics1997/01/01327
Essential physics of carrier transport in nanoscale MOSFETs2002/01/01319