Materials Science and Engineering: B

Title Publication Date Language Citations
Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions1995/01/01English
Effects of thermal annealing on properties of p-type ZnSe grown by MOVPE1997/01/01English
Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI1996/12/01English
Damage annealing and dopant activation in Al ion implanted α-SiC1997/04/01English
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates1999/05/01English
Fabrication of pseudo-spin-valves and 100 nm sized periodic elements for magnetic memory application2000/06/01English
Vertical motional narrowing of exciton-polaritons in GaN based quantum wells2001/05/01English
Crystal structure, thermal expansion and electrical conductivity of Nd0.7Sr0.3Fe1−xCoxO3 (0≤x≤0.8)2002/03/01English
Microstructure and thermoelectric properties of p-type Fe0.9Mn0.1Si2 compounds prepared by pressureless sintering1999/12/01English
Spectral microphotoluminescence investigation of impurity-defect interaction in CdTe with high spatial resolution1997/05/01English
Correlation between material properties and leakage currents in CVD diamond films deposited by DC plasma glow discharge1997/05/01English
Two successive effects in the interaction of nanocrystalline SnO2 thin films with reducing gases2000/08/01English
Silicidation behaviors of Co/Ti and Co/Hf bilayers on doped polycrystalline Si substrate1999/11/01English
Characteristics of GaN films grown on the stress-imposed Si(111)2000/09/01English
Atomic structure of the GaN(100,110,111) surfaces1997/01/01English
Simulation study of strained layer CdxZn1−xTe–ZnTe quantum well laser structures1998/12/01English
Index2000/03/01English
Investigation of the surface of P-implanted LPCVD silicon films1996/12/01English
Characterisation of a low-voltage actuated gold microswitch1998/02/01English
Feasibility of manufacturing large domain YBCO Levitators™ by using melt processing techniques1998/05/01English
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry2002/04/01English
Nonlinear spectroscopy of homoepitaxial GaN2001/05/01English
The doping process of p-type GaN films2000/06/01English
Experimental investigation on the dielectric behavior of nanostructured rutile-phase titania2000/05/01English
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy2001/03/01English
Annealing and recrystallization of amorphous silicon carbide produced by ion implantation1999/07/01English
Study of carrier recombination at structural defects in InGaN films2002/04/01English
Comparison of wurtzite and zinc blende III–V nitrides field effect transistors: a 2D Monte Carlo device simulation1997/12/01English
Effect of interdiffusion on electrical and gas sensor properties of CuO/SnO2 heterostructure1999/01/01English
The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides2001/03/01English