Emerging Photoluminescence in Monolayer MoS2

Article Properties
  • Language
    English
  • DOI (url)
  • Publication Date
    2010/03/15
  • Journal
  • Indian UGC (Journal)
  • Refrences
    22
  • Citations
    7,459
  • Andrea Splendiani Physics Department, University of California at Berkeley, Berkeley, California 94720Scuola Galileiana di Studi Superiori di Padova, 35122 Padova, Italy
  • Liang Sun Physics Department, University of California at Berkeley, Berkeley, California 94720
  • Yuanbo Zhang Physics Department, University of California at Berkeley, Berkeley, California 94720
  • Tianshu Li Chemistry Department, University of California at Davis, Davis, California 95616
  • Jonghwan Kim Physics Department, University of California at Berkeley, Berkeley, California 94720
  • Chi-Yung Chim Physics Department, University of California at Berkeley, Berkeley, California 94720
  • Giulia Galli Chemistry Department, University of California at Davis, Davis, California 95616
  • Feng Wang Physics Department, University of California at Berkeley, Berkeley, California 94720Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
Cite
Splendiani, Andrea, et al. “Emerging Photoluminescence in Monolayer MoS2”. Nano Letters, vol. 10, no. 4, 2010, pp. 1271-5, https://doi.org/10.1021/nl903868w.
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010). Emerging Photoluminescence in Monolayer MoS2. Nano Letters, 10(4), 1271-1275. https://doi.org/10.1021/nl903868w
Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim CY, et al. Emerging Photoluminescence in Monolayer MoS2. Nano Letters. 2010;10(4):1271-5.
Journal Categories
Science
Chemistry
Science
Chemistry
General
Including alchemy
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
Refrences Analysis
The category Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 9 is the most frequently represented among the references in this article. It primarily includes studies from Physical Review B The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
Citations Analysis
The first research to cite this article was titled Atomically ThinMoS2: A New Direct-Gap Semiconductor and was published in 2010. The most recent citation comes from a 2024 study titled Atomically ThinMoS2: A New Direct-Gap Semiconductor . This article reached its peak citation in 2019 , with 805 citations.It has been cited in 654 different journals, 15% of which are open access. Among related journals, the Physical Review B cited this research the most, with 330 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year