Applied Physics Letters

Title Publication Date Language Citations
Tunneling through a controllable vacuum gap1982/01/15English1,010
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering2006/09/11English988
Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods2002/06/03English983
Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes2000/10/02English977
Laser-induced holographic surface relief gratings on nonlinear optical polymer films1995/03/06English972
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN1969/11/15English971
High performance optical absorber based on a plasmonic metamaterial2010/06/21English964
Gallium vacancies and the yellow luminescence in GaN1996/07/22English962
Graphene segregated on Ni surfaces and transferred to insulators2008/09/15English960
Magnetic and martensitic transformations of NiMnX(X=In,Sn,Sb) ferromagnetic shape memory alloys2004/11/08English957
Field controlled light scattering from nematic microdroplets1986/01/27English954
Field emission from well-aligned zinc oxide nanowires grown at low temperature2002/11/04English953
Highly ordered nanochannel-array architecture in anodic alumina1997/11/10English953
High-efficiency photovoltaic devices based on annealed poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1- phenyl-(6,6)C61 blends2005/08/18English949
Oxygen vacancies in ZnO2005/09/19English948
The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis1996/11/18English947
Endothermic energy transfer: A mechanism for generating very efficient high-energy phosphorescent emission in organic materials2001/09/24English946
High-efficiency organic electrophosphorescent devices with tris(2-phenylpyridine)iridium doped into electron-transporting materials2000/08/07English943
Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films2001/04/16English941
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering2003/02/17English937
Room-temperature saturated ferroelectric polarization in BiFeO3 ceramics synthesized by rapid liquid phase sintering2004/03/08English937
10.1162/1532443033227536162000/01/01English935
Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO32005/01/31English934
Electrowetting-based actuation of liquid droplets for microfluidic applications2000/09/11English932
Macromolecular electronic device: Field-effect transistor with a polythiophene thin film1986/11/03English928
CURRENT-VOLTAGE CHARACTERISTICS OF JOSEPHSON JUNCTIONS1968/04/15English918
Preparation of ‘‘amorphous’’ Ni60Nb40 by mechanical alloying1983/12/01English912
6% magnetic-field-induced strain by twin-boundary motion in ferromagnetic Ni–Mn–Ga2000/08/07English910
Reproducible switching effect in thin oxide films for memory applications2000/07/03English902
A NOTE ON THE MAXIMUM CRITICAL FIELD OF HIGH-FIELD SUPERCONDUCTORS1962/09/01English900