IEEE Electron Device Letters

Title Publication Date Language Citations
Fast organic thin-film transistor circuits1999/06/01126
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS1991/04/01125
An adjustable work function technology using Mo gate for CMOS devices2002/01/01124
Analog and digital circuits using organic thin-film transistors on polyester substrates2000/11/01123
Pi-Gate SOI MOSFET2001/08/01123
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology2002/05/01121
Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures1997/04/01121
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors1997/12/01120
Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs1999/09/01119
Unpinned GaAs MOS capacitors and transistors1988/09/01118
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors1999/04/01117
Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates1997/12/01116
Experimental evaluation of impact ionization coefficients in GaN1999/12/01116
Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination1996/03/01114
Single-transistor latch in SOI MOSFETs1988/12/01114
Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content1998/06/01114
Characteristics of offset-structure polycrystalline-silicon thin-film transistors1988/01/01113
Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer2001/10/01113
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V2001/08/01110
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs1990/01/01109
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing1989/02/01109
Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz1997/05/01109
High-voltage accumulation-layer UMOSFET's in 4H-SiC1998/12/01108
Current instabilities in GaN-based devices2001/02/01108
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era2000/05/01107
Subpicosecond InP/InGaAs heterostructure bipolar transistors1989/06/01107
Physics-based RTD current-voltage equation1996/05/01105
An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects1992/01/01105
A low-voltage triggering SCR for on-chip ESD protection at output and input pads1991/01/01105
Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs1998/08/01105