IEEE Electron Device Letters

Title Publication Date Language Citations
IEEE Transactions for Electron Devices2024/02/01
IEEE Electron Device Letters Publication Information2024/02/01
Awards Flyer2024/02/01
Call for Nominations for Editor-in-Chief2024/02/01
Table of Contents2024/02/01
Blank Page2024/02/01
Bilayer Y-Type Transverse Thermoelectric Generator With Non-Contact Vertical Thermal Coupling Using LTCC Technology2024/04/01
Comparator With Non-Uniform Parameter Compensation Using Dual-Gate Thin-Film Transistors2024/04/01
Piezoelectricity Enhanced Self-Powered Solar-Blind Ultraviolet Photodetectors Based on Ga2O3/ZnO Heterojunction2024/04/01
Front Cover2024/02/01
High Sensitivity Ethanol Gas Sensor Based on Hollow F-Doped SnO₂ Nanofibers2024/04/01
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection2024/04/01
Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device2024/03/01
Investigation of a Novel Planar Meander Slot-Line Slow-Wave Structure2024/03/01
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation2024/03/01
Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment2024/03/01
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias2024/03/01
Vertically Extended Channel Architecture for Implementing a Photolithographically Scalable Thin-Film Transistor2023/08/01
Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays2023/08/01
The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf0.5Zr0.5O2 Ferroelectric Capacitor2023/09/01
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film2023/09/01
Two-Dimensional MSi2N4 Heterostructure P-Type Transistors With Sub-Thermionic Transport Performances2023/09/01
MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications2023/09/01
High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer2023/09/01
Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode2023/09/01
Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film2023/09/01
Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate2023/09/01
Metamaterial-Inspired Backward Wave Oscillator Using a Dual Band Coaxial Coupler2023/09/01
Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures2023/09/01
RF p-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications2023/09/01