IEEE Electron Device Letters

Title Publication Date Language Citations
Stacked pentacene layer organic thin-film transistors with improved characteristics1997/12/01769
Pentacene organic thin-film transistors-molecular ordering and mobility1997/03/01639
Power semiconductor device figure of merit for high-frequency applications1989/10/01531
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs2000/06/01527
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's1997/05/01517
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide2001/04/01442
Power electronics on InAlN/(In)GaN: Prospect for a record performance2001/11/01429
New MBE buffer used to eliminate backgating in GaAs MESFETs1988/02/01425
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates1999/04/01392
Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization1996/04/01386
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's1997/02/01362
NROM: A novel localized trapping, 2-bit nonvolatile memory cell2000/11/01346
AlGaN/AlN/GaN high-power microwave HEMT2001/10/01339
Elementary scattering theory of the Si MOSFET1997/07/01336
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors1990/04/01316
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor2000/02/01291
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors1994/03/01263
Current-induced light emission from a porous silicon device1991/12/01253
Diamond cold cathode1991/08/01252
Effects of floating-gate interference on NAND flash memory cell operation2002/05/01245
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy2002/01/01238
Current transport in metal/hafnium oxide/silicon structure2002/02/01225
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation1991/04/01215
High Al-content AlGaN/GaN MODFETs for ultrahigh performance1998/02/01211
Self-heating in high-power AlGaN-GaN HFETs1998/03/01210
Performance limiting micropipe defects in silicon carbide wafers1994/02/01209
Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing1993/03/01204
Generalized scale length for two-dimensional effects in MOSFETs1998/10/01203
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs2000/09/01203
High breakdown GaN HEMT with overlapping gate structure2000/09/01200