Semiconductor Science and Technology

Title Publication Date Language Citations
Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement1991/10/0178
On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures2006/06/2878
Survey of ultraviolet non-line-of-sight communications2014/06/0177
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data2015/06/2277
Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer2011/05/1077
Below bandgap optical absorption in tellurium-doped GaSb2005/07/1877
Review of SiC crystal growth technology2018/09/0577
Recent developments of diamond detectors for particles and UV radiation2000/08/0976
Silicon solar cells: evolution, high-efficiency design and efficiency enhancements1993/01/0176
GaNAsSb: how does it compare with other dilute III V-nitride alloys?2002/07/0976
Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation2003/04/2876
Bulk AlN growth by physical vapour transport2014/06/0176
A review on the recent developments of solution processes for oxide thin film transistors2015/05/0876
Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors2007/05/0475
Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes2003/11/0375
Infrared spectroscopy and transport of electrons in semiconductor superlattices1995/05/0174
Chlorine-based dry etching ofβ-Ga2O32016/04/1474
Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE1989/08/0174
Electron transport in indium arsenide nanowires2010/01/2274
Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films1996/02/0173
The QD-Flash: a quantum dot-based memory device2010/12/0973
High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics2014/06/0173
Aharonov Bohm oscillations of a tuneable quantum ring2002/04/1273
A review of defects and disorder in multinary tetrahedrally bonded semiconductors2016/11/1072
Growth and characterization of electrodeposited Cu2O thin films2013/10/0872
Dye-sensitized solar cells using ZnO nanotips and Ga-doped ZnO films2008/02/2572
Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures2009/05/2671
Threshold voltage in junctionless nanowire transistors2011/09/0671
III-nitrides for energy production: photovoltaic and thermoelectric applications2013/06/2171
Electromigration in thin film conductors1997/10/0171