Semiconductor Science and Technology

Title Publication Date Language Citations
Free and bound excitons in thin wurtzite GaN layers on sapphire1996/05/0193
Review of carbon nanotube nanoelectronics and macroelectronics2014/05/0192
GaSb-related materials for TPV cells2003/04/0792
A new technique for growing large surface area SnO2thin film (RGTO technique)1990/12/0192
Generation of terahertz radiation by photomixing with dual- and multiple-mode lasers2005/06/0891
Anisotropy of the electron Landégfactor in quantum wells1997/04/0191
Chemical bath deposition of ZnS thin films and modification by air annealing1997/10/0191
The structural and optical properties of Cu2O films electrodeposited on different substrates2004/12/0491
Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation2002/12/1289
An outline of the synthesis and properties of silicon nanowires2010/01/2289
Annealing effects on optical and crystallographic properties of CBD grown CdS films2003/06/0289
A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics2002/12/2488
The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes fromI–V–Tcharacteristics2006/01/2687
The effect of substrate temperature on the properties of ITO thin films for OLED applications2006/11/1087
Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures1989/07/0187
Surface passivated InAs/InP core/shell nanowires2010/01/2287
Reliability of thin SiO21994/05/0287
Oxidation of silicon: the VLSI gate dielectric1995/03/0187
Interband optical investigation of Bloch oscillations in semiconductor superlattices1998/03/0187
Influence of annealing on physical properties of evaporated SnS films2006/07/1087
GaSb photovoltaic cells for applications in TPV generators2003/04/0787
Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics2015/08/2487
The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes2005/11/2287
Individual defects at the Si:SiO2interface1989/12/0187
Reliability and parasitic issues in GaN-based power HEMTs: a review2016/08/2586
Atomic-scale simulation of ALD chemistry2012/06/2286
Lateral β-Ga2O3 field effect transistors2019/11/2885
The mechanisms of electronic excitation of rare earth impurities in semiconductors1993/05/0185
Terahertz radiation detectors: the state-of-the-art2018/10/2485
Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission2016/08/1085