Title	Publication Date	Language	Citations
An in-loop facility for reactor irradiations at the temperature range 76 to 300°K	1981/01/01	English
Description of radiation effects by means of potential curve graphs	1986/09/01	English
The insulator-metal transition in heavily-doped Si and Ge	1970/01/01	English
Erratum	1977/01/01	English
The independence of the trapping of mobile particles near a solid surface on depth variation of diffusion	1985/01/01	English
A study of radiation damage by elastic scattering experiments	1980/01/01	English
A proposed macroscopic model of the nucleus	1986/03/01	English
Doppler broadenings of neutron resonances in crystal lattices compared with the gas-model approximation	1986/03/01	English
Josephson junction fabrication by means of ion implantation and electron beam lithography	1980/01/01	English
Point defect mobility in irradiated GaAs	1981/01/01	English
Generation centre distribution in boron-implanted silicon p-n junctions	1974/01/01	English
Reaction cross-section calculations using new experimental and theoretical level structure data for deformed nuclei	1986/03/01	English
Indium-zinc implanted gallium arsenide diodes	1972/09/01	English
Gamma-radiolysis of paraformaldehyde by chain mechanism	1984/01/01	English
Exact solutions to a model for the growth of radiation damage during progressive ion implantation	1983/01/01	English
Chemical transport of silicon and germanium during anneal treatment	1971/01/01	English
Leachability study of modified synroc-B waste form: Effect of gamma irradiation	1982/01/01	English
Spectral-angular distributions op kumakhov radiation for channeled electrons and positrons	1982/01/01	English
Subthreshold energy electron beam annealing of tin-implanted silicon	1984/01/01	English
Letters to the editor	1976/01/01	English
Radiation damage in solid butane irradiated by Xe+, Kr+, Ar+, Ne+and He+ions with energies below 1500 eV	1976/01/01	English
On the motional states of dipolar impurities in ionic matrices	1970/01/01	English
Defects and impurities interaction enhanced by ionization in ion-implanted silicon	1980/01/01	English
Cross sections, benchmarks, etc.:What is data testing all about?	1986/03/01	English
System and growth studies for depositing uniform epitaxial silicon films on silicon in horizontal reactor	1970/01/01	English
Hyperchanneling positron radiation spectrum structure	1987/12/01	English
Lattice distortion in deuterium implanted niobium	1987/01/01	English
Recrystallization processes in snte thin films implanted with the nobel gas ions (Kr, Xe)	1980/01/01	English
Letters to the Editor	1970/01/01	English
Letters to the editor	1971/02/01	English